ace 230 3 p - channel enhancement mode mosfet ver 1. 3 1 d escription the ace 230 3 is the p - channel logic enhancement mode power field effect transistor s are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on - state resistance. these devices ar e particularly suited for low voltage application such as cellular phone and notebook computer power management and battery powered circuits, and low in - line power l oss are needed in a very small outline surface mount package. features ? - 30 v/ - 2.6 a, r ds(on) = 13 0 m @v gs = - 10 v ? - 30 v/ - 2.0 a, r ds(on) = 180 m @v gs = - 4 .5v ? super high density cell design for extremely low r ds(on) ? exceptional on - resistance and maximum dc current capability application ? power management in note book ? portable equipmen t ? battery powered system ? dc/dc converter ? load switch ? dsc ? lcd display inverter absolute maximum ratings (t a =25 unless otherwise noted) p arameter s ymbol typical u nit drain - source voltage v dss - 30 v gate - source voltage v gss 20 v continuous drain curren t (t j =150 ) t a =25 i d - 3. 0 a t a =70 - 2.0 pulsed drain current i dm - 1 0 a continuous source current (diode conduction) i s - 1.25 a power dissipation t a =25 p d 1.25 w t a =70 0.8 operating junction temperature t j 150 storage temperature range t st g - 55/150 thermal resistance - junction to ambient r ja 1 0 0 /w
ace 230 3 p - channel enhancement mode mosfet ver 1. 3 2 packaging type sot - 23 - 3 3 1 2 ordering information ace 230 3 xx + h electrical characteristics ( t a =25 , unless otherwise noted) parameter symbol conditions min. typ max. unit static drain - source breakdown voltage v (br)dss v gs =0v, i d = - 10 ua - 30 v gate threshold voltage v gs(th) v ds =v gs , i d = - 250ua - 1.0 - 3.0 gate leakage current i gss v ds =0.v, v gs = 2 0 v 100 na zero gate voltage drain current i dss v ds = - 30 v, v gs =0v - 1 ua v ds = - 30 v, v gs =0v t j =55 - 10 on - state drain current i d(on) v ds Q - 5v, v gs = - 10 v - 6 a drain - source on - resistance r ds(on) v gs = - 10 v, i d = - 2.6 a 0.0 9 5 0.130 v gs = - 4 .5v, i d = - 2 . 0 a 0. 125 0. 180 forward transconductance g fs v ds = - 10 v, i d = - 1.7 a 2.4 s diode forward voltage v sd i s = - 1. 2 5 a, v gs =0v - 0.8 - 1.2 v dynamic total gate charge q g v ds = - 15 v, v gs = - 10 v, i d - 1.7 a 5 .8 10 nc gate - sou rce charge q gs 0.8 gate - drain charge q gd 1. 5 input capacitance c iss v ds = - 15 v, v gs =0v, f=1mhz 226 pf output capacitance c oss 8 7 sot - 2 3 - 3 description 1 gate 2 source 3 drain bm : sot - 23 - 3 ha l o g e n - f r e e pb - free
ace 230 3 p - channel enhancement mode mosfet ver 1. 3 3 reverse transfer capacitance c rss 19 turn - on time t d(on) v dd = - 15 v, r l = 15 i d - 1.0a, v gen = - 10 v r g =6 9 20 ns t r 9 20 turn - off time t d(off) 18 3 5 t f 6 20 typical characteristics output characteristics transfer characteristics v ds C drain to source voltage (v) v g s C gate t o source voltage (v) on - resistance vs. drain current capacitance i d C drain current ( a ) v d s C drain to source voltage (v)
ace 230 3 p - channel enhancement mode mosfet ver 1. 3 4 typical characteristics gate charge on - resistance vs. junction temperature o q t otal gate charge ( nc) t j C junction temperature ( ) source - drain diode forward voltage on - resistance vs. gate - to - source voltage v sd source to drain voltage (v) v gs C gate to source voltage (v)
ace 230 3 p - channel enhancement mode mosfet ver 1. 3 5 typical characteristics threshold voltage single pulse power t j C temperature time (sec) normalized thermal transient impedance, junct i on - to - ambient squ are wave pulse duration (sec)
ace 230 3 p - channel enhancement mode mosfet ver 1. 3 6 packing information sot - 23 - 3
ace 230 3 p - channel enhancement mode mosfet ver 1. 3 7 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices o r systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectivene ss. ace technology co., ltd. http://www.ace - ele.com/
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